氧化硅薄膜良好的硬度、光學性能、介電性質、耐磨及抗蝕等特性，在光學、微電子等領域有著廣泛的應用前景，是目前國際上廣泛關注的功能材料。氧化硅有兩個突出的用途：它的絕緣性可以作為保護膜使p-n結免受周圍環境雜質的污染；此外，可以用作穩定的、高溫掩膜阻隔材料，能選擇性阻擋施主或受主雜質進入硅片中。因此，要求氧化硅薄膜具有高穩定性及良好性能。
本論文闡述氧化硅活性薄膜的工藝條件及優化方案，所考察的因素對薄膜性能的影響次序是靶-基距＞基片溫度＞濺身氣壓＞濺射氣壓＞濺射功率。
本論文提出利用直流磁控濺射及相關控制設備在表面為氧化硅的基片上濺鍍Al接觸層以測量分析表面為氧化硅的不銹鋼基片的性能。
關鍵詞：氧化硅薄膜 鍍Al接觸層 測量 磁控濺射
Abstract
SiOX thin films have many excellent properties such as hardness, optical properties, dielectric properties, wear resistance and corrosion resistance. It has been widely used in optical and micro-electronic applications. In general， SiOX has two prominent uses. Its isolation is not only utilized as protective film to protect p-n junction from polluting by surrounding impurity., but also can be used as stable, high temperature mask material. Additionally, it can obstruct donor impurity or acceptor impurity into silicon chip. Thereby, it is important for SiOX film to have high stability and well capability.
The optimization way and technological parameters of active SiOX thin film are discussed in this paper. The results show the influence sequence of technological parameters to SiOX thin film is substrate-target distance, substrate temperature, sputtering pressure, sputtering power.
A procedure which is to deposit Al contact layer on the substrate with SiOX on the surface making use of DC magnetron sputtering and correlative control equipment. After that, the properties of SiOX thin film on the stainless steel target are measured.
Keywords: SiOX thin film; Al contact layer deposition; measurement; magnetron sputtering
